Infineon IRFB3307ZPBF
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ST64838397 | 1,000 | 1 | 13h | |||||||||
| 942-IRFB3307ZPBF | 656 | 1 | Tube | 2d | ||||||||
| IRFB3307ZPBF | 14,042 | 18h | ||||||||||
| IRFB3307ZPBF | 17,167 | 7 | 1d | |||||||||
| IRFB3307ZPBF | 17,167 | 1 | 1d |
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)120 A
Current Rating120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance5.8 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance5.8 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max5.8 mΩ
Recovery Time33 ns
Resistance5.8 MΩ
Rise Time64 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time38 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)75 V
Dimensions
Height9.02 mm
Length10.66 mm
Width4.82 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.118
$ 1.77
Stock
1,366,073
249,578
Authorized Distributors
16
1
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
120 A
120 A
Threshold Voltage
4 V
-
Rds On Max
5.8 mΩ
5.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
230 W
230 W
Input Capacitance
4.75 nF
4.75 nF
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFB3307ZPBF.
Related Parts
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IRFB3306PBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin TO-220AB
InfineonIRFB3307PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5 Milliohms;ID 130A;TO-220AB;PD 250W;gFS 98S
InfineonIRF3808PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 140A;TO-220AB;PD 330W;-55de
Descriptions
Descriptions of Infineon IRFB3307ZPBF provided by its distributors.
MOSFET, N Ch., 75V, 120A, 5.8 MOHM, 79 NC QG, TO-220AB, Pb-Free
Single N-Channel 75 V 5.8 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
75V 120A 5.8m´Î@10V75A 230W 4V@150Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
MOSFET, N, 75V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3307; Current Id Max:120A; N-channel Gate Charge:79nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:480A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)120 A
Current Rating120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance5.8 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance5.8 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max5.8 mΩ
Recovery Time33 ns
Resistance5.8 MΩ
Rise Time64 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time38 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)75 V
Dimensions
Height9.02 mm
Length10.66 mm
Width4.82 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements