Infineon IRF7424PBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7424PBF | 9 | 1d | ||||||||||
| 70016994 | 0 | 3800 | Bulk | 10h | ||||||||
| 604585-IRF7424PBF | 135,256 | 60 | 3d | |||||||||
| IRF7424PBF | 165,928 | 7 | Tape & Reel | 1d | ||||||||
| IRF7424PBF | 353 | 10 | 1d |
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time76 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max13.5 mΩ
Recovery Time60 ns
Resistance13.5 MΩ
Rise Time23 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-2.5 V
Turn-Off Delay Time150 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
Width4.05 mm
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF7424PBF.
Related Parts
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Single P-Channel 30 V 19.7 mOhm 52 nC HEXFET® Power Mosfet - SOIC-8
onsemiFDS6680A
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
Descriptions
Descriptions of Infineon IRF7424PBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
P-channel MOSFET Transistor, 11 A 30 V, 8-Pin SOIC
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
Single P-Channel 30 V 22 mOhm 110 nC HEXFET® Power Mosfet - SOIC-8
IRF7424PBF,MOSFET, P-CHANNEL, -30V, -11A, 13.5 MOHM, 75 NC Q
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:11A; Resistance, Rds On:0.0135ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-2.5V; Case Style:SOIC; Termination ;RoHS Compliant: Yes
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-11A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:47A; SMD Marking:F7424; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time76 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-2.5 V
Number of Channels1
Number of Elements1
On-State Resistance13.5 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max13.5 mΩ
Recovery Time60 ns
Resistance13.5 MΩ
Rise Time23 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-2.5 V
Turn-Off Delay Time150 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
Width4.05 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements