Vishay IRF640STRLPBF
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 844-IRF640STRLPBF | 2,003 | 1 | Tape & Reel | 1d | ||||||||
| IRF640STRLPBFCT-ND | 1,472 | 1 | Cut Tape | 1d | ||||||||
| 2147007 | 800 | 800 | Tape & Reel | 1d | ||||||||
| 56AJ9915 | 780 | 1 | Cut Tape | 1d | ||||||||
| IRF640STRLPBF | 4,000 | 800 | Tape & Reel | 12h |
Technical Specifications
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount, Through Hole
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation130 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time51 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Inventory History
3 month trend: +23.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.124
$ 1
Stock
233,421
278,174
Authorized Distributors
9
14
Mount
Surface Mount, Through Hole
Surface Mount
Case/Package
TO-263-3
D2PAK
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
18 A
18 A
Threshold Voltage
-
4 V
Rds On Max
180 mΩ
180 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
130 W
3.1 W
Input Capacitance
1.3 nF
1.3 nF
Engineering Resources
View Evaluation kits and Reference designs for Vishay IRF640STRLPBF.
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MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55
Descriptions
Descriptions of Vishay IRF640STRLPBF provided by its distributors.
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
MOSFET N-CH 200V 18A D2PAK / Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +23.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount, Through Hole
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time36 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation130 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time51 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements