Diodes Inc. BSS8402DW-7-F
Technical Specifications
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight6.010099 mg
Technical
Continuous Drain Current (ID)115 mA
Current Rating115 mA
Drain to Source Resistance4.4 Ω
Drain to Source Voltage (Vdss)-50 V
Dual Supply Voltage60 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation200 mW
Rds On Max7.5 Ω
Resistance10 Ω
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage2.5 V
Turn-Off Delay Time18 ns
Turn-On Delay Time10 ns
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Inventory History
3 month trend: -1.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for Diodes Inc. BSS8402DW-7-F.
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Future Electronics
DigiKey
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Mouser
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.148
$ 0.158
Stock
7,840,883
815,416
Authorized Distributors
12
7
Mount
Surface Mount
Surface Mount
Case/Package
SOT-363
SOT-363
Drain to Source Voltage (Vdss)
-50 V
50 V
Continuous Drain Current (ID)
115 mA
130 mA
Threshold Voltage
2.5 V
-
Rds On Max
7.5 Ω
13.5 Ω
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
200 mW
-
Input Capacitance
50 pF
50 pF
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. BSS8402DW-7-F.
Related Parts
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DMN601DWK Series Dual N-Channel 60 V 2 Ohm MosFet Surface Mount - SOT-363-6
Descriptions
Descriptions of Diodes Inc. BSS8402DW-7-F provided by its distributors.
Transistor: P-MOSFET; unipolar; -60V; -115mA; 13.5ohm; 200mW; -55+150 deg.C; SMD; SOT363(SC88)
Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A 6-Pin SOT-363 T/R / MOSFET N/P-CH 60V/50V SC70-6
MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:115mA; Source Voltage Vds:60V; On Resistance
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 115mA; Continuous Drain Current Id, P Channel: -130mA; Current Id Max: 800mA; Drain Source Voltage Vds, N Channel: 60V; Drain Source Voltage Vds, P Channel: -50V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 3.2ohm; On Resistance Rds(on), P Channel: 10ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: -1.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight6.010099 mg
Technical
Continuous Drain Current (ID)115 mA
Current Rating115 mA
Drain to Source Resistance4.4 Ω
Drain to Source Voltage (Vdss)-50 V
Dual Supply Voltage60 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation200 mW
Rds On Max7.5 Ω
Resistance10 Ω
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage2.5 V
Turn-Off Delay Time18 ns
Turn-On Delay Time10 ns
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Documents
Download datasheets and manufacturer documentation for Diodes Inc. BSS8402DW-7-F.
TME
iiiC
Future Electronics
DigiKey
Jameco
Mouser
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements