Diodes Inc. BSS138DW-7-F

Dual N-Channel 50 V 3.5 Ohm Surface Mount Enhancement MosFet - SOT-363

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight6.010099 mg
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation200 mW
Rds On Max3.5 Ω
Resistance3.5 Ω
Schedule B8541210080
Threshold Voltage1.2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)50 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm

Documents

Download datasheets and manufacturer documentation for Diodes Inc. BSS138DW-7-F.

element14 APAC
Datasheet5 pages14 years ago
RS (Formerly Allied Electronics)
Datasheet6 pages10 years ago
Diodes Inc SCT
Datasheet6 pages4 years ago
Technical Drawing5 pages6 years ago
Mouser
Datasheet4 pages16 years ago
iiiC
Datasheet5 pages14 years ago
Future Electronics
Datasheet4 pages15 years ago
Jameco
Datasheet6 pages16 years ago

Inventory History

3 month trend:
-0.37%

Engineering Resources

View Evaluation kits and Reference designs for Diodes Inc. BSS138DW-7-F.

Related Parts

Descriptions

Descriptions of Diodes Inc. BSS138DW-7-F provided by its distributors.

Dual N-Channel 50 V 3.5 Ohm Surface Mount Enhancement MosFet - SOT-363
Transistor MOSFET Array Dual N-CH 50V 200mA 6-Pin SOT-363 T/R
Transistor, MOSFET, 2 N-channel, 50V, 0.2A, SOT-363, SMD
Trans MOSFET N-CH 50V 0.2A Automotive 6-Pin SOT-363 T/R
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NN CH, 50V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Source Voltage Vds:50V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-363 Polarity: N/N Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET, NN CH, 50V, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 200mA; Current Id Max: 200mA; Drain Source Voltage Vds, N Channel: 50V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 1.4ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 50V; Voltage Vgs Rds on Measurement: 10V

Manufacturer Aliases

Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH

Part Number Aliases

This part may be known by these alternate part numbers:

  • BSS138DW-7-F.
  • BSS138DW-7F
  • BSS138DW7F

Technical Specifications

Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight6.010099 mg
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation200 mW
Rds On Max3.5 Ω
Resistance3.5 Ω
Schedule B8541210080
Threshold Voltage1.2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)50 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm

Documents

Download datasheets and manufacturer documentation for Diodes Inc. BSS138DW-7-F.

element14 APAC
Datasheet5 pages14 years ago
RS (Formerly Allied Electronics)
Datasheet6 pages10 years ago
Diodes Inc SCT
Datasheet6 pages4 years ago
Technical Drawing5 pages6 years ago
Mouser
Datasheet4 pages16 years ago
iiiC
Datasheet5 pages14 years ago
Future Electronics
Datasheet4 pages15 years ago
Jameco
Datasheet6 pages16 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement127 pages10 years ago