onsemi BCP56-16T1G

Single Bipolar Transistor, NPN, 80 V, 1 A, 1.5 W, SOT-223 (TO-261), 4 Pins, Surface Mount
Production
In Stock

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency130 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.57 mm
Length6.5 mm
Width3.5 mm

Documents

Download datasheets and manufacturer documentation for onsemi BCP56-16T1G.

onsemi
Datasheet5 pages12 years ago
Datasheet4 pages18 years ago
Burklin Elektronik
Datasheet6 pages6 years ago
element14 APAC
Datasheet5 pages13 years ago
Newark
Datasheet5 pages8 years ago
Farnell
Datasheet5 pages10 years ago
TME
Datasheet6 pages6 years ago
Datasheet0 pages0 years ago
iiiC
Datasheet5 pages12 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages18 years ago

Inventory History

3 month trend:
+19.73%

Alternate Parts

Price @ 1000
$ 0.118
$ 0.139
$ 0.139
Stock
4,921,093
3,544,584
3,544,584
Authorized Distributors
11
11
11
Mount
-
-
-
Case/Package
SOT-223-4
SOT-223-4
SOT-223-4
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
1 A
1 A
1 A
Transition Frequency
130 MHz
130 MHz
130 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
500 mV
hFE Min
25
25
25
Power Dissipation
1.5 W
1.5 W
1.5 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi BCP56-16T1G.

Related Parts

Descriptions

Descriptions of onsemi BCP56-16T1G provided by its distributors.

Single Bipolar Transistor, NPN, 80 V, 1 A, 1.5 W, SOT-223 (TO-261), 4 Pins, Surface Mount
Bipolar junction transistor, NPN, 1 A, 80 ## Fehler ##, SMD, SOT-23, BCP56-16T1G
Transistor, Bipolar,Si,NPN,Medium Power,VCEO 80VDC,IC 1A,PD 1.5W,SOT-223,hFE 25
80V 1.5W 100@150mA,2V 1A NPN SOT-223 Bipolar Transistors - BJT ROHS
TRANS NPN 80V 1A SOT-223 / Trans GP BJT NPN 80V 1A 1500mW 4-Pin(3+Tab) SOT-223 T/R
1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 100 to 250
BCP Series 80 V 1.5 A Surface Mount NPN Silicon Epitaxial Transistor - SOT-223
Bipolar Transistors - BJT 1A 100V NPN
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor, Npn, 80V, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BCP56-16T1G.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 25 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 130 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1 / Reflow Temperature Max. °C = 260

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • BCP56-16T1G.

Technical Specifications

Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency130 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.57 mm
Length6.5 mm
Width3.5 mm

Documents

Download datasheets and manufacturer documentation for onsemi BCP56-16T1G.

onsemi
Datasheet5 pages12 years ago
Datasheet4 pages18 years ago
Burklin Elektronik
Datasheet6 pages6 years ago
element14 APAC
Datasheet5 pages13 years ago
Newark
Datasheet5 pages8 years ago
Farnell
Datasheet5 pages10 years ago
TME
Datasheet6 pages6 years ago
Datasheet0 pages0 years ago
iiiC
Datasheet5 pages12 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages18 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago