onsemi 2N3906TF

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)-40 V
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min100
Max Breakdown Voltage160 V
Max Collector Current-200 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm

Documents

Download datasheets and manufacturer documentation for onsemi 2N3906TF.

Future Electronics
Datasheet7 pages14 years ago
onsemi
Datasheet7 pages17 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet6 pages23 years ago
Datasheet0 pages0 years ago
Datasheet6 pages12 years ago
Datasheet6 pages23 years ago
Technical Drawing1 page15 years ago
Technical Drawing1 page15 years ago
Farnell
Datasheet10 pages10 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Upverter
Datasheet12 pages2 years ago
Technical Drawing1 page4 years ago
Jameco
Datasheet10 pages15 years ago
Datasheet7 pages16 years ago
Newark
Datasheet0 pages0 years ago

Inventory History

3 month trend:
-6.12%

Alternate Parts

Price @ 1000
$ 0.062
$ 0.063
$ 0.063
Stock
1,028,186
1,391,100
1,391,100
Authorized Distributors
8
10
10
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92
TO-92
TO-92
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-40 V
-40 V
-40 V
Max Collector Current
-200 mA
-200 mA
-200 mA
Transition Frequency
250 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
-400 mV
-400 mV
-400 mV
hFE Min
100
100
100
Power Dissipation
625 mW
625 mW
625 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi 2N3906TF.

Related Parts

Descriptions

Descriptions of onsemi 2N3906TF provided by its distributors.

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP Transistor General Purpose
200 mA, 40 V PNP Small Signal Bipolar Junction Transistor
Trans GP BJT PNP 40V 0.2A 625mW 3-Pin TO-92 T/R
2N3906 Series 40 V 0.2 A 625 mW PNP General Purpose Amplifier - TO-92-3
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP, -40V, TO-92; Transistor; TRANSISTOR, PNP, -40V, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:-200mA; DC Current Gain hFE:100; No. of Pins:3

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • 2N3906TF.

Technical Specifications

Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)-40 V
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min100
Max Breakdown Voltage160 V
Max Collector Current-200 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm

Documents

Download datasheets and manufacturer documentation for onsemi 2N3906TF.

Future Electronics
Datasheet7 pages14 years ago
onsemi
Datasheet7 pages17 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet6 pages23 years ago
Datasheet0 pages0 years ago
Datasheet6 pages12 years ago
Datasheet6 pages23 years ago
Technical Drawing1 page15 years ago
Technical Drawing1 page15 years ago
Farnell
Datasheet10 pages10 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Upverter
Datasheet12 pages2 years ago
Technical Drawing1 page4 years ago
Jameco
Datasheet10 pages15 years ago
Datasheet7 pages16 years ago
Newark
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago