onsemi 2N3906TA
Production
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)-40 V
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current-200 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Inventory History
3 month trend: -48.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi 2N3906TA.
Newark
Fairchild Semiconductor
element14 APAC
Future Electronics
Jameco
iiiC
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.063
$ 0.044
Stock
1,379,100
3,112,736
Authorized Distributors
10
9
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
-40 V
40 V
Max Collector Current
-200 mA
200 mA
Transition Frequency
250 MHz
250 MHz
Collector Emitter Saturation Voltage
-400 mV
-400 mV
hFE Min
100
100
Power Dissipation
625 mW
625 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi 2N3906TA.
Related Parts
onsemi2N3906BU
Single Bipolar Transistor, PNP, 40 V, 200 mA, 250 mW, TO-92 (TO-226), 3 Pins, Through Hole
onsemi2N3906TFR
Transistor General Purpose BJT PNP 40 Volt 0.2 Amp 3-Pin TO-92 Tape and Reel
onsemi2N3906RL1G
Small Signal PNP Bipolar Transistor, TO-92 40 V, 0.2 A
Descriptions
Descriptions of onsemi 2N3906TA provided by its distributors.
Transistor General Purpose BJT PNP 40 Volt 0.2 Amp 3-Pin TO-92 Ammo
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
200 mA, 40 V PNP Small Signal Bipolar Junction Transistor
2N3906 Series 40 V CE Breakdown 0.2 A PNP General Purpose Amplifier - TO-92
40V 625mW 200mA 100@10mA1V 250MHz 400mV@50mA5mA PNP -55¡Í~+150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -40V, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, BIPOL, PNP, -40V, TO-92-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 625mW; DC Collector Current: -; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Reverse Recovery Time trr Max: 60ns
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -48.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)-40 V
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current-200 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Documents
Download datasheets and manufacturer documentation for onsemi 2N3906TA.
Newark
Fairchild Semiconductor
element14 APAC
Future Electronics
Jameco
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements