onsemi TIP31BG
Production
In StockTechnical Specifications
Physical
Case/PackageTO-220-3
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1.2 V
Collector Emitter Voltage (VCEO)80 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min25
Max Collector Current3 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency3 MHz
Voltage Rating (DC)80 V
Dimensions
Height15.748 mm
Length10.2616 mm
Width4.826 mm
Inventory History
3 month trend: +1.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.335
$ 0.135
Stock
302,309
85,042
Authorized Distributors
11
2
Mount
-
Through Hole
Case/Package
TO-220-3
TO-220-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
3 A
3 A
Transition Frequency
3 MHz
3 MHz
Collector Emitter Saturation Voltage
1.2 V
1.2 V
hFE Min
25
25
Power Dissipation
2 W
40 W
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi TIP31BG.
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Descriptions
Descriptions of onsemi TIP31BG provided by its distributors.
TIP Series 80 V 3 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Trans GP BJT NPN 80V 3A 2000mW 3-Pin(3+Tab) TO-220AB Tube
TRANSISTOR, NPN, 80V, 3A, TO-220AB; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 40W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor
80V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA NPN -65¡Í~+150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
3 A 80 V NPN Si POWER TRANSISTOR TO-220AB
POWER TRANSISTOR, NPN, 80V, 3MHZ, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:-RoHS Compliant: Yes
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +1.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220-3
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1.2 V
Collector Emitter Voltage (VCEO)80 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min25
Max Collector Current3 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency3 MHz
Voltage Rating (DC)80 V
Dimensions
Height15.748 mm
Length10.2616 mm
Width4.826 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements