Vishay SUD09P10-195-GE3
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-8.8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance162 mΩ
Drain to Source Voltage (Vdss)-100 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.055 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation2.5 W
Rds On Max195 mΩ
Resistance195 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time33 ns
Turn-On Delay Time7 ns
Dimensions
Height2.507 mm
Inventory History
3 month trend: -7.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SUD09P10-195-GE3.
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Descriptions
Descriptions of Vishay SUD09P10-195-GE3 provided by its distributors.
Single P-Channel 100 V 0.195 Ohm Surface Mount Power Mosfet - TO-252-3
Power Field-Effect Transistor, 8.8A I(D), 100V, 0.195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET,P CH,DIODE,100V,8.8A,TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.162ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:-8.8A; Power Dissipation Pd:2.5W; Voltage Vgs Max:-20V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -7.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-8.8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance162 mΩ
Drain to Source Voltage (Vdss)-100 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.055 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation2.5 W
Rds On Max195 mΩ
Resistance195 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time33 ns
Turn-On Delay Time7 ns
Dimensions
Height2.507 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements