STMicroelectronics STP260N6F6

N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
Production

Price and Stock

Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time62.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.4 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max3 mΩ
Resistance3 MΩ
Rise Time165 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time144.4 ns
Turn-On Delay Time31.4 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP260N6F6.

Newark
Datasheet14 pages18 years ago
Farnell
Datasheet14 pages18 years ago

Inventory History

3 month trend:
-0.10%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics STP260N6F6.

Related Parts

Descriptions

Descriptions of STMicroelectronics STP260N6F6 provided by its distributors.

N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
STP260N6F6 Series 60 V 3 mOhm N-Channel STripFET™ VI DeepGATE™ Mosfet - TO-220
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Tube
MOSFET, N CH, 60V, 120A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Available until stocks are exhausted Alternative available

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Technical Specifications

Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time62.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.4 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max3 mΩ
Resistance3 MΩ
Rise Time165 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time144.4 ns
Turn-On Delay Time31.4 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP260N6F6.

Newark
Datasheet14 pages18 years ago
Farnell
Datasheet14 pages18 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant