Vishay SI7174DP-T1-GE3
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)21 A
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.77 nF
Max Operating Temperature150 °C
Max Power Dissipation6.25 W
Min Operating Temperature-55 °C
Nominal Vgs4.5 V
Number of Channels1
Number of Elements1
Power Dissipation6.25 W
Rds On Max7 mΩ
Resistance7 mΩ
Rise Time11 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4.5 V
Turn-Off Delay Time38 ns
Turn-On Delay Time21 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Inventory History
3 month trend: -1.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI7174DP-T1-GE3.
Related Parts
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VishaySI7148DP-T1-GE3
Si7148DP Series 75 V 0.011 Ohm 28 A SMT N-Channel Mosfet - PowerPAK SO-8
Descriptions
Descriptions of Vishay SI7174DP-T1-GE3 provided by its distributors.
Si7174DP Series N-Channel 75 V 0.007 Ohms SMT Power Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 75V 21A 8-Pin PowerPAK SO EP T/R
Power Field-Effect Transistor, 21A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 75V 60A 104W 7.0mohm @ 10V
N-CH 75V 60A 7mOhm PPSO-8 RoHSconf
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:6.25W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Current Id Max:60A; Junction Temperature Tj Max:150°C; Operating Temperature Range:-55°C to +150°C; Package / Case:PowerPAK; Power Dissipation Pd:104W; Power Dissipation Pd:6.25W; Rise Time:11ns; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -1.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)21 A
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.77 nF
Max Operating Temperature150 °C
Max Power Dissipation6.25 W
Min Operating Temperature-55 °C
Nominal Vgs4.5 V
Number of Channels1
Number of Elements1
Power Dissipation6.25 W
Rds On Max7 mΩ
Resistance7 mΩ
Rise Time11 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4.5 V
Turn-Off Delay Time38 ns
Turn-On Delay Time21 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements