Vishay SI2347DS-T1-GE3

P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3
Datasheet

Price and Stock

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Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance68 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance705 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.7 W
Rds On Max42 mΩ
Rise Time6 ns
Schedule B8541290080
Threshold Voltage-2.5 V
Turn-Off Delay Time19 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2347DS-T1-GE3.

element14 APAC
Datasheet10 pages7 years ago
Upverter
Datasheet10 pages4 years ago
Future Electronics
Datasheet10 pages7 years ago
RS (Formerly Allied Electronics)
Datasheet10 pages8 years ago

Inventory History

3 month trend:
-14.30%

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI2347DS-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI2347DS-T1-GE3 provided by its distributors.

P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3
MOSFET, P-CH, -30V, -5A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Source Voltage Vds:-30V; On Resistance
Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P-CH, -30V, -5A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance68 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance705 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.7 W
Rds On Max42 mΩ
Rise Time6 ns
Schedule B8541290080
Threshold Voltage-2.5 V
Turn-Off Delay Time19 ns
Dimensions
Height1.12 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2347DS-T1-GE3.

element14 APAC
Datasheet10 pages7 years ago
Upverter
Datasheet10 pages4 years ago
Future Electronics
Datasheet10 pages7 years ago
RS (Formerly Allied Electronics)
Datasheet10 pages8 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago