Vishay SI2302CDS-T1-GE3

SI2302CDS-T1-GE3 Vishay Transistor MOSFET N-CH 20V2.6A 3-Pin SOT-23 T/R RoHS
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation710 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation710 mW
Rds On Max57 mΩ
Resistance57 mΩ
Rise Time7 ns
Schedule B8541210080
Threshold Voltage850 mV
Turn-Off Delay Time30 ns
Turn-On Delay Time8 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2302CDS-T1-GE3.

Farnell
Datasheet8 pages11 years ago
Datasheet8 pages11 years ago
Datasheet5 pages14 years ago
Datasheet5 pages15 years ago
Newark
Datasheet8 pages8 years ago
element14 APAC
Datasheet8 pages9 years ago
Datasheet8 pages8 years ago
Datasheet8 pages10 years ago
Upverter
Datasheet8 pages8 years ago
TME
Datasheet8 pages5 years ago
RS (Formerly Allied Electronics)
Datasheet8 pages8 years ago
iiiC
Datasheet8 pages11 years ago
Arrow Electronics
Datasheet8 pages11 years ago

Inventory History

3 month trend:
+108%

Alternate Parts

Price @ 1000
$ 0.225
$ 0.148
$ 0.148
Stock
6,480,906
2,100,798
2,100,798
Authorized Distributors
15
12
12
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
20 V
20 V
20 V
Continuous Drain Current (ID)
2.6 A
2.6 A
2.6 A
Threshold Voltage
850 mV
400 mV
400 mV
Rds On Max
57 mΩ
57 mΩ
57 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
8 V
Power Dissipation
710 mW
710 mW
710 mW
Input Capacitance
-
112 pF
112 pF

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI2302CDS-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay SI2302CDS-T1-GE3 provided by its distributors.

SI2302CDS-T1-GE3 Vishay Transistor MOSFET N-CH 20V2.6A 3-Pin SOT-23 T/R RoHS
Single N-Channel 20 V 0.057 Ohms Surface Mount Power Mosfet - SOT-23
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
N CHANNEL MOSFET, 20V, 2.9A, TO-236; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A;
N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Mosfet, N Channel, 20V, 0.045Ohm, 2.6A, To-236, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:2.5V; Power Dissipation:710Mw Rohs Compliant: No |Vishay SI2302CDS-T1-GE3.

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • SI2302CDS-T1-GE3.
  • SI2302CDST1GE3

Technical Specifications

Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation710 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation710 mW
Rds On Max57 mΩ
Resistance57 mΩ
Rise Time7 ns
Schedule B8541210080
Threshold Voltage850 mV
Turn-Off Delay Time30 ns
Turn-On Delay Time8 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Vishay SI2302CDS-T1-GE3.

Farnell
Datasheet8 pages11 years ago
Datasheet8 pages11 years ago
Datasheet5 pages14 years ago
Datasheet5 pages15 years ago
Newark
Datasheet8 pages8 years ago
element14 APAC
Datasheet8 pages9 years ago
Datasheet8 pages8 years ago
Datasheet8 pages10 years ago
Upverter
Datasheet8 pages8 years ago
TME
Datasheet8 pages5 years ago
RS (Formerly Allied Electronics)
Datasheet8 pages8 years ago
iiiC
Datasheet8 pages11 years ago
Arrow Electronics
Datasheet8 pages11 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago