Descriptions of Vishay SUM65N20-30-E3 provided by its distributors.
SUM65N20 Series 200 V 65 A 30 mOhm Surface Mount N-Channel Mosfet - D2PAK-3
Power MOSFET, N Channel, 200 V, 65 A, 0.03 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 200V 65A D2PAK
Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CHANNEL MOSFET, 200V, 65A, TO-263; Tra; N CHANNEL MOSFET, 200V, 65A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:65A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:375W; No. Of Pins:3Pins Rohs Compliant: Yes |Vishay SUM65N20-30-E3.
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:65A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Max Repetitive Avalanche Energy:61mJ; Power Dissipation:375W; Power Dissipation on 1 Sq. PCB:3.75W; Power, Pd:375W; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Time, trr Typ:130ns; Typ Capacitance Ciss:5100pF; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V