Vishay SIHP25N40D-GE3

Name: Vishay SIHP25N40D-GE3
Brand: Vishay
SKU: SIHP25N40D-GE3

MOSFET, N-CH, 400V, 25A, TO-220AB; Transistor Polarity: N Channel; Continuous Dra

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
TTI Asia	SIHP25N40D-GE3	Contact								6h
Farnell	SIHP25N40D-GE3	0	1K					1.650*	1.650*	2h
Microchip USA	SIHP25N40D-GE3	1,146	600	Tube				3.232	3.232	20h
Win Source	WS-SIHP25N40D-GE3	13,000	8			6.485	4.323	4.323	4.323	3h
Esaler Electronic	SIHP25N40D-GE3	1			4.040	4.000	3.960	3.921	3.882	2d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SIHP25N40D-GE3.

IHS

Datasheet7 pages10 years ago

element14 APAC

Farnell

Future Electronics

TME

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-01-12

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-11-04

LTD Date2025-05-04

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Descriptions

Descriptions of Vishay SIHP25N40D-GE3 provided by its distributors.

MOSFET, N-CH, 400V, 25A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra

Newark

MOSFET N-CH 400V 25A TO220AB / N-Channel 400 V 25A (Tc) 278W (Tc) Through Hole TO-220AB

Win Source

D Series 400 V 25 A 170 mOhm Single N-Channel Power MOSFET - TO-220AB

Future Electronics

Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB

Verical

400V 25A 170m´Î@10V13A 278W 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH, 400V, 25A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:278W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C

Farnell