onsemi FQP22N30

Name: onsemi FQP22N30
Brand: onsemi
SKU: FQP22N30

Power MOSFET, N-Channel, QFET®, 300 V, 21 A, 160 mΩ, TO-220

$ 1.24

EOL

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Distributor	SKU		Min	Pkg
Rochester Electronics	FQP22N30	2					1.390	1.240	1.170	2d
element14 APAC	FQP22N30	0	1		3.695*	2.586*	2.086*	1.820*	1.820*	13h
Farnell	FQP22N30	0	1		3.920*	3.021*	2.645*	1.893*	1.893*	1d
Win Source	WS-FQP22N30	5,699	3			16.918	13.746	13.746	13.746	41m
Worldway Electronics	FQP22N30	26,042	7	Tube		0.450	0.436	0.413	0.413	2h

Inventory History

3 month trend: -71.43%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP22N30.

Upverter

Technical Drawing1 page6 years ago

Farnell

IHS

Future Electronics

onsemi

Inventory History

3 month trend:

-71.43%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-06-12

Lifecycle StatusEOL (Last Updated: 4 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Descriptions

Descriptions of onsemi FQP22N30 provided by its distributors.

Power MOSFET, N-Channel, QFET®, 300 V, 21 A, 160 mΩ, TO-220

onsemi

Trans MOSFET N-CH 300V 21A 3-Pin(3+Tab) TO-220AB Rail

Avnet

N-Channel 300 V 0.16 Ohm Through Hole Mosfet - TO-220

Future Electronics

Power Field-Effect Transistor, 21A I(D), 300V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N CH, 300V, 21A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:300V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:TO-220; Power Dissipation Pd:170W; Termination Type:Through Hole; Voltage Vds Typ:300V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor