Vishay IRF9540SPBF

Name: Vishay IRF9540SPBF
Brand: Vishay
SKU: IRF9540SPBF

Single P-Channel 100 V 0.2 Ohms Surface Mount Power Mosfet - D2PAK-3

$ 1.235

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min
Avnet	2	01AC4891	82	1	4.340	2.090	1.760	1.510	1.510	19h
Newark		IRF9540SPBF	212	1	5.750	2.980	2.710	2.090	2.070
Verical	3	IRF9540SPBF	10	6		1.350	1.256	1.092	1.092
Arrow Electronics	2	IRF9540SPBF	10	1	1.800	1.350	1.350	1.350	1.350
TME	2	IRF9540SPBF	1,965	1	2.480	1.760	1.290	1.120	1.120	6h

Inventory History

3 month trend: -61.73%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRF9540SPBF.

Newark

Datasheet9 pages4 years ago

Datasheet8 pages16 years ago

Datasheet8 pages17 years ago

Datasheet9 pages10 years ago

Datasheet9 pages12 years ago

Datasheet6 pages28 years ago

ODG (Origin Data Global)

IHS

element14 APAC

Farnell

Inventory History

3 month trend:

-61.73%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishayIRF9540SPBF

VishayIRF9540STRLPBF

Price @ 1000

$ 1.235

$ 1.07

Stock

171,994

223,457

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

-100 V

Continuous Drain Current (ID)

19 A

Threshold Voltage

-4 V

Rds On Max

200 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.7 W

Input Capacitance

1.4 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-09-11

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay IRF9540SPBF provided by its distributors.

Single P-Channel 100 V 0.2 Ohms Surface Mount Power Mosfet - D2PAK-3

Future Electronics

In a Pack of 5, P-Channel MOSFET, 19 A, 100 V, 3-Pin D2PAK Vishay IRF9540SPBF

Fly-Wing Technology

Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W; No. Of Pins:3Pins Rohs Compliant: No |Vishay IRF9540SPBF.

Newark

MOSFET, P, 100V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:100V; Current, Id Cont:19A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Current, Idm Pulse:72A; Power, Pd:150W; Voltage, Vds:100V; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

Farnell