STMicroelectronics STF10NM60N
$ 1.45
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF10NM60N.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.45
$ 1.176
Stock
1,441,928
183,946
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
8 A
8 A
Threshold Voltage
3 V
4 V
Rds On Max
550 mΩ
550 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
25 W
25 W
Input Capacitance
540 pF
540 pF
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Descriptions
Descriptions of STMicroelectronics STF10NM60N provided by its distributors.
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220FP package
Power MOSFET, N Channel, 600 V, 10 A, 550 Milliohms, TO-220FP, 3 Pins, Through Hole
STF10NM60N N-CHANNEL MOSFET TRANSISTOR, 10 A, 600 V, 3-PIN TO-220FP
STMICROELECTRONICS STF10NM60N Power MOSFET, N Channel, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmeshseries, Vds=600 V, 10 A, TO-220FPencapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 600V, 8A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance540 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation25 W
Rds On Max550 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time32 ns
Turn-On Delay Time10 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF10NM60N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant