STMicroelectronics STF11NM50N
$ 1.371
Production
Inventory History
3 month trend: -3.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Descriptions
Descriptions of STMicroelectronics STF11NM50N provided by its distributors.
N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a TO-220FP package
Power MOSFET, N Channel, 500 V, 8.5 A, 0.4 ohm, TO-220FP, Through Hole
25W(Tc) 25V 4V@ 250¦ÌA 19nC@ 10 V 1N 500V 470m¦¸@ 4.5A,10V 8.5A 547pF@50V TO-220FP 16.4mm
Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220FP Tube
500 V-9 A-0.4 OHM TO-220FP N-CHANNEL MDMESH II POWER MOSFET Power Field-Effect Transistor, 9A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 500V, 9A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -3.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance470 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance547 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation25 W
Rds On Max470 mΩ
Resistance470 MΩ
Rise Time10 ns
Threshold Voltage3 V
Turn-Off Delay Time33 ns
Turn-On Delay Time8 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant