STMicroelectronics STB60NF06T4
$ 0.68
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB60NF06T4.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.68
$ 0.972
Stock
371,491
1,098,885
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
60 A
60 A
Threshold Voltage
3 V
1 V
Rds On Max
16 mΩ
14 mΩ
Gate to Source Voltage (Vgs)
20 V
15 V
Power Dissipation
150 W
110 W
Input Capacitance
1.81 nF
2 nF
Related Parts
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Descriptions
Descriptions of STMicroelectronics STB60NF06T4 provided by its distributors.
N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
N-CHANNEL 60V-0.014 OHM-60A D2PAK STRIPFET II POWER MOSFET Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
110W(Tc) 20V 4V@ 250¦ÌA 66nC@ 10 V 1individualNChannel 60V 16m¦¸@ 30A,10V 60A 1.81nF@25V D2PAK SMD mount 10.4mm*9.35mm*4.6mm
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation P
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.81 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage60 V
Min Operating Temperature-65 °C
Nominal Vgs3 V
Number of Elements1
PackagingTape and Reel
Power Dissipation150 W
Rds On Max16 mΩ
Resistance16 mΩ
Rise Time108 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)60 V
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB60NF06T4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant