Infineon IRFZ48NSTRLPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS +/-20V

MOSFET N-CH 55V 64A D2PAK "N-Channel 55 V 64A (Tc) 3.8W (Ta), 130W (Tc) Surface Mount D2PAK"

Single N-Channel 55V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK T/R

Power MOSFET, N Channel, 55 V, 64 A, 0.014 ohm, TO-263AB, Surface Mount

MOSFET, N-CH, 55V, 64A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:64A; Package/Case:D2-PAK; Power Dissipation, Pd:140W; Continuous Drain Current - 100 Deg C:45A; Drain Source On Resistance @ 10V:14mohm ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 64 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 14 / Gate-Source Voltage V = 20 / Fall Time ns = 50 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130