Infineon IRFZ48NSPBF

Name: Infineon IRFZ48NSPBF
Brand: Infineon
SKU: IRFZ48NSPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 14 Milliohms; ID 64A; D2Pak; PD 130W; VGS +/-20V

$ 1.81

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFZ48NSPBF	0	600	Bulk				1.810	1.810	5h
Farnell	IRFZ48NSPBF	0	5			1.451*	0.949*	0.618*	0.605*	13h
Win Source	WS-IRFZ48NSPBF	16,000	145					0.300	0.269	14h
Worldway Electronics	IRFZ48NSPBF	8,405	7	Tube		0.573	0.555	0.526	0.526	13h
Chipsmall Limited	IRFZ48NSPBF	100,000	1		1.310	0.873	0.524	0.437	0.437	13h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFZ48NSPBF.

IHS

Datasheet11 pages22 years ago

Datasheet12 pages22 years ago

Newark

RS (Formerly Allied Electronics)

DigiKey

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-08-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFZ48NSPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 130 W

Distrelec

Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK Tube

Verical

Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:64A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:700mJ; Capacitance Ciss Typ:1970pF; Current Id Max:64A; Package / Case:D2-PAK; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:210A; Reverse Recovery Time trr Typ:100ns; SMD Marking:Z48NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC