STMicroelectronics STB55NF06T4
$ 0.85
Production
Inventory History
3 month trend: -6.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB55NF06T4.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
STMicroelectronicsSTB60NF06T4
N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
InfineonIRFZ44ESTRLPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;D2Pak;PD 110W;VGS +/-20V;-55
STMicroelectronicsSTB60NF06LT4
N-channel 60 V, 0.012 Ohm typ., 60 A STripFET II Power MOSFET in a D2PAK package
InfineonIRFZ44ESTRRPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;D2Pak;PD 110W;VGS +/-20V;-55
STMicroelectronicsSTB45NF06T4
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
Descriptions
Descriptions of STMicroelectronics STB55NF06T4 provided by its distributors.
N-Channel 60V - 0.017Ohm - 50A - D2PAK StripFET(TM) II POWER MOSFET
Power MOSFET, N Channel, 60 V, 27.5 A, 0.015 ohm, TO-263 (D2PAK), Surface Mount
STB55NF06T4 N-CHANNEL MOSFET TRANSISTOR, 50 A, 60 V, 3-PIN D2PAK
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 60V 50A D2PAK
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 60V, 50A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:110W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -6.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Current Rating50 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature175 °C
Max Power Dissipation95 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max18 mΩ
Resistance18 mΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time36 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)60 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB55NF06T4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant