STMicroelectronics STB34NM60ND
$ 5.465
EOL
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Inventory History
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CAD Models
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Alternate Parts
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Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB34NM60ND.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-18
Lifecycle StatusEOL (Last Updated: 2 months ago)
LTB Date2026-09-10
LTD Date2027-03-10
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Descriptions
Descriptions of STMicroelectronics STB34NM60ND provided by its distributors.
N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) D2PAK
Power MOSFET, N Channel, 600 V, 29 A, 0.097 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 600V 29A D2PAK
N-Ch MOSFET 600V 29A 110mΩ@14.5A,10V 190W(Tc) 25V 5V@250µA 80.4nC@10V 2.785nF@50V D2PAK (TO-263-3) SMD
Mosfet, N Ch, 600V, 29A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STB34NM60ND
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)29 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time61.8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.785 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation190 W
Rds On Max110 mΩ
Resistance110 MΩ
Rise Time53.4 ns
Threshold Voltage4 V
Turn-Off Delay Time111 ns
Turn-On Delay Time30 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB34NM60ND.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant