STMicroelectronics STB42N65M5
$ 5.915
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB42N65M5.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STB42N65M5 provided by its distributors.
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in D2PAK package
STB42N65M5 N-CHANNEL MOSFET TRANSISTOR, 33 A, 650 V, 2+TAB-PIN TO-263
Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh M5series, Vds=650 V, 33 A, D2PAK (TO-263)encapsulation, surface mount, 3Pin
MOSFET, N CH, 650V, 33A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance79 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.65 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation190 W
Manufacturer Package IdentifierD2PAK-0079457
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation190 W
Rds On Max79 mΩ
Resistance79 mΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time65 ns
Turn-On Delay Time61 ns
Dimensions
Height4.83 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB42N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant