STMicroelectronics STB36NM60ND
Obsolete
Price and Stock
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Min
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Inventory History
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CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB36NM60ND.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-24
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2023-12-01
LTD Date2024-06-01
Related Parts
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N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) D2PAK
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N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB34N65M5
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in D2PAK package
VishaySIHB30N60E-GE3
MOSFET, N CH, 600V, 29A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
Descriptions
Descriptions of STMicroelectronics STB36NM60ND provided by its distributors.
MOSFET N-CH 600V 29A D2PAK / N-Channel 600 V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
STB36NM60ND N-channel MOSFET Transistor, 29 A, 600 V, 3-Pin D2PAK
Trans MOSFET N-CH 600V 29A Automotive 3-Pin(2+Tab) D2PAK T/R
Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
Single N-Channel 600 V 0.11 Ohm 80.4 nC 190 W Silicon SMT Mosfet - TO-263-3
MOSFET, N-CH, 600V, 29A, 150DEG C, 190W; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.097ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)29 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time61.8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.785 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation190 W
Rds On Max110 mΩ
Resistance110 mΩ
Rise Time53.4 ns
Turn-Off Delay Time111 ns
Turn-On Delay Time30 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB36NM60ND.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant