Semikron SKM100GB063D

Igbt, D-61, Igbt, 600 V, 130 A, 600 V, 130 A, 600 V, -40 to 150 Degc | Semikron SKM100GB063D

IGBT MODULE, DUAL N CH, 600V, 130A; Transistor Polarity: Dual N Channel; DC Collector Current: 130A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 600V; Trans

Igbt Module, 600V, 130A, Semitrans 2; Continuous Collector Current:130A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SKM 100 GB 063D

not recommended for new design Features: N channel, homogeneous Silicon structure (NPT- Non punch through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp.-coeff. of V CEsat Very low C ies , C oes , C res Latch-up free Fast & soft inverse CAL diodes Isolated copper Bonding Technology without hard mould Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: Switching (not for linear use) Switched mode power supplies UPS Three phase inverters for servo / AC motor speed control Pulse frequencies also above 10 kHz