ROHM RUF025N02TL

Name: ROHM RUF025N02TL
Brand: ROHM
SKU: RUF025N02TL

Trans Mosfet N-ch 20V 2.5A 3-PIN Tumt T/r

$ 0.269

NRND

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Distributor		SKU		Min	Pkg
CoreStaff		ST50070449	5,141	1		0.304	0.304	0.249	0.193	0.187	9h
Verical	3	RUF025N02TL	634	10			0.379	0.294	0.246	0.194
Arrow Electronics		RUF025N02TL	634	1		0.480	0.379	0.294	0.269	0.269
DigiKey	3	RUF025N02TLCT-ND	12,158	1	Cut Tape	1.060	0.663	0.433	0.301	0.301
Newark		RUF025N02TL	2,894	1		0.865	0.587	0.417	0.290	0.235

Inventory History

3 month trend: -1.11%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for ROHM RUF025N02TL.

IHS

Datasheet14 pages10 years ago

element14 APAC

_legacy Avnet

Inventory History

3 month trend:

-1.11%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-06-02

Lifecycle StatusNRND (Last Updated: 1 month ago)

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Descriptions

Descriptions of ROHM RUF025N02TL provided by its distributors.

Trans MOSFET N-CH 20V 2.5A 3-Pin TUMT T/R

Verical

Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

ROHM NMOS RUF025N02, Vds=20 V, 2.5 A, SOT-323, , 3

UnikeyIC

MOSFET, N-CH, 20V, 2.5A, TUMT3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 300mV; P

Farnell

Mosfet, N Channel, 20V, 2.5A, Tumt3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:2.5A; Tensión Drenaje-Fuente Vds:20V; Resistencia De Activación Rds(On):0.039Ohm; Tensión Vgs De Medición Rds(On):4.5V |Rohm RUF025N02TL

Newark