onsemi RFD3055LESM9A

Name: onsemi RFD3055LESM9A
Brand: onsemi
SKU: RFD3055LESM9A

N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ

$ 0.3

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Future Electronics	3	RFD3055LESM9A	92,500	2500	Tape & Reel					0.455
Newark	2	RFD3055LESM9A	1,767	1	Cut Tape	0.648	0.648	0.648	0.648	0.648
Verical	3	RFD3055LESM9A	2,053	5			0.367	0.359	0.307	0.257
Arrow Electronics	2	RFD3055LESM9A	2,141	1		0.528	0.372	0.363	0.274	0.274
Master Electronics		RFD3055LESM9A	4,600	100				0.300	0.275	0.253

Inventory History

3 month trend: +185%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi RFD3055LESM9A.

Newark

Datasheet0 pages0 years ago

Upverter

Farnell

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

+185%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiRFD3055LESM9A

IntersilRFD3055LESM9A

Price @ 1000

$ 0.3

$ 0.283

Stock

1,045,932

10,651

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

11 A

Threshold Voltage

3 V

Rds On Max

107 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

38 W

48 W

Input Capacitance

350 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-03-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi RFD3055LESM9A provided by its distributors.

N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ

onsemi

N-Channel 60 V 0.107 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA

Future Electronics

N-CHANNEL LOGIC LEVEL POWER MOSFET Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:11mA; Package/Case:3-TO-251; Operating Temperature Range:-55°C to +175°C

Newark

These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.

Fairchild Semiconductor