onsemi FQD13N06LTM

Name: onsemi FQD13N06LTM
Brand: onsemi
SKU: FQD13N06LTM

N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK

$ 0.257

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Future Electronics	3	FQD13N06LTM	172,500	2500	Tape & Reel					0.260
Newark	2	FQD13N06LTM	826	1	Cut Tape	1.060	0.696	0.559	0.559	0.559
Verical	3	FQD13N06LTM	61	23				0.257	0.257	0.257
Arrow Electronics	2	FQD13N06LTM	290	1		0.532	0.501	0.382	0.382	0.382
Master Electronics		FQD13N06LTM	4,700	100				0.225	0.220	0.208

Inventory History

3 month trend: +27.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQD13N06LTM.

Farnell

Datasheet11 pages4 years ago

JRH Electronics

IHS

onsemi

Newark

Inventory History

3 month trend:

+27.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQD13N06LTM

NexperiaBUK92150-55A,118

Price @ 1000

$ 0.257

$ 1.153

Stock

1,022,284

1,362,754

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

TO-252

Drain to Source Voltage (Vdss)

60 V

55 V

Continuous Drain Current (ID)

11 A

Threshold Voltage

2.5 V

Rds On Max

115 mΩ

125 mΩ

Gate to Source Voltage (Vgs)

20 V

15 V

Power Dissipation

2.5 W

3.6 W

Input Capacitance

350 pF

338 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-07-05

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQD13N06LTM provided by its distributors.

N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK

onsemi

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,11A I(D),TO-252AA

Newark

N-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3

Future Electronics

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N CH, 60V, 11A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 28W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor