Descriptions of onsemi RFD14N05SM9A provided by its distributors.
N-Channel Power MOSFET 50V, 14A, 100mΩ
Power MOSFET, N Channel, 50 V, 14 A, 0.1 ohm, TO-252AA, Surface Mount
50V 14A 100m´Î@10V14A 48W 4V@250Ã×A N Channel TO-252AA MOSFETs ROHS
onsemi NChannel EnhancedMOSTube, Vds=50 V, 14 A, DPAK (TO-252)encapsulation, surface mount, 3Pin
Fet 50V 100.0 Mohm Dpak Rohs Compliant: Yes
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor; Transistor POLARITY
IC,RFD14N05SM9A,ADDED FOR DPP( INTERSIL) PKG ID CHANGE<AZ
PWR MOS TAPE AND REEL RFD14N05SM
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770.