onsemi NTD4809NA-1G
$ 0.099
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Related Parts
onsemiNTD4808N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
onsemiNTD4806NA-1G
Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 14A 2.14W 4.7ns
onsemiNTD70N03R-001
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 32A Tc 32A 1.87W 1.3ns
Descriptions
Descriptions of onsemi NTD4809NA-1G provided by its distributors.
Tube Through Hole N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 2.3ns
MOSFETs- Power and Small Signal NFET 30V 58A 9MOHM
Trans MOSFET N-CH 25V 11.5A 3-Pin(3+Tab) IPAK Rail
2W 20V 1N 30V 9m¦¸ 11.5A TO-247-3 6.73mm*2.38mm*6.22mm
NTD4809NA - MOSFET N-CH 30V 9A IPAK;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)11.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.456 nF
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2 W
Rds On Max9 mΩ
Rise Time22.7 ns
Turn-Off Delay Time25.3 ns