onsemi NDS351N

Name: onsemi NDS351N
Brand: onsemi
SKU: NDS351N

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Win Source	WS-NDS351N	6,200	290					0.166	0.135	1d
Worldway Electronics	NDS351N	14,822	7	Tape & Reel		0.051	0.049	0.046	0.046	23h
Fmall Co., Limited	NDS351N	14,220			0.125	0.125	0.117	0.110	0.101	13h
Anlinkda	NDS351N	43,703			0.265	0.237	0.196	0.196	0.185	7h
RC Electronics	NDS351N	39,260	1		0.190	0.170	0.160	0.150	0.140	2d

CAD Models

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Datasheets & Documents

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IHS

Datasheet8 pages4 years ago

Datasheet7 pages28 years ago

Farnell

onsemi

Fairchild Semiconductor

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1994-01-01

Lifecycle StatusObsolete (Last Updated: 2 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi NDS351N provided by its distributors.

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ

onsemi

30V 1.1A 500mW 160m´Î@10V1.4A 2V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

Dasenic

Mosfet, N-Ch, 30V, 1.1A, Supersot-3; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes

Newark

MOSFET, N SOT-23; Transistor type:MOSFET; Current, Id cont:1.1A; Resistance, Rds on:0.2ohm; Case style:SOT-23 (TO-236); Current, Idm pulse:10A; Depth, external:2.5mm; Length / Height, external:1.12mm; Marking, SMD:351; Pins, No. of:3; Power dissipation:0.5W; Power, Pd:0.5W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V; Width, external:3.05mm; Width, tape:8mm

Farnell

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Fairchild Semiconductor