Infineon IRLML2803TRPBF

Infineon Technologies N channel HEXFET power MOSFET, 30 V, 1.2 A, SOT-23, IRLML2803TRPBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-20V

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Power MOSFET, N Channel, 30 V, 850 mA, 0.25 ohm, SOT-23, Surface Mount

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 540 mW

HEXFET Power MOSFET Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

N Channel Mosfet, 30V, 1.2A, Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:850Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRLML2803TRPBF.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:0.85A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.3A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.4W; Power, Pd:0.4W; Quantity, Reel:3000; SMD Marking:1B; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.5V; Width, External:3.05mm; Width, Tape:8mm