onsemi MMBT3906TT1G

Name: onsemi MMBT3906TT1G
Brand: onsemi
SKU: MMBT3906TT1G

Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 200 mW, SOT-416, Surface Mount

$ 0.035

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Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
DigiKey	3	MMBT3906TT1GOSCT-ND	399,465	1	Cut Tape	0.150	0.090	0.055	0.035	0.035
Avnet	3	MMBT3906TT1G	1,323,000	3K						0.014	14h
Future Electronics	5	MMBT3906TT1G	894,000	3K	Tape & Reel					0.015
Newark	3	MMBT3906TT1G	3,902	1	Cut Tape	0.145	0.145	0.057	0.037	0.037
Verical	4	MMBT3906TT1G	60,000	30K

Inventory History

3 month trend: +42.51%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MMBT3906TT1G.

IHS

Datasheet8 pages8 years ago

Master Electronics

Farnell

Newark

Inventory History

3 month trend:

+42.51%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-03-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MMBT3906TT1G provided by its distributors.

Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 200 mW, SOT-416, Surface Mount

Avnet Silica

Bipolar Transistors (BJT); MMBT3906TT1G; ON SEMICONDUCTOR; PNP; 40 V; 200 mA; 3

Maritex

ON Semi MMBT3906TT1G PNP Bipolar Transistor; 0.2 A; 40 V; 3-Pin SOT-416

Epart123

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

Semicontronic

MMBT Series 40 V 200 mA SMT PNP Silicon General Purpose Transistor - SOT-416

Future Electronics

General Purpose Transistors PNP Vceo=40V Ic=200mA VCE(sat)=400mV@50mA,5mA hFE=100@10mA,1V

HQonline

400mV@ 5mA,50mA PNP 300mW 5V 50nA 40V 40V 200mA SC-75,SOT-416 1.6mm*800¦Ìm*800¦Ìm

UnikeyIC

Bipolar Transistors - BJT 200mA 40V PNP

Digi-ic_SMART PIONEER

This tranisistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power applications.

North Star Micro

Bipolar Transistor, Pnp, -40V, Sot-416; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:200Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MMBT3906TT1G.

Newark