onsemi HGTG30N60A4D

Trans IGBT Chip N-CH 600V 70A 463000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 75A 463W TO247

HGTG30N60A4 Series 600 V 75 A Flange Mount SMPS N-Channel IGBT-TO-247

600V,SMPS SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST DIODE

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247

IGBTs 600V, N-Channel IGBT SMPS Series

Ptpigbt To247 600V Smps Rohs Compliant: Yes

463W 1.8V 600V 75A TO-247-3 15.62mm*4.7mm*24.38mm

FAIRCHILD SEMICONDUCTOR HGTG30N60A4DIGBT Single Transistor, General Purpose, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Device Marking:HGTG30N60A4D; Fall Time Typ:38ns; Fall Time tf:38ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Configuration:With flywheel diode; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Pulsed Current Icm:240A; Rise Time:12s; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.