onsemi HGTG12N60A4D
Obsolete
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Related Parts
STMicroelectronicsSTGWA19NC60HD
STGWA19NC60HD Series 600 V 52 A Very Fast IGBT with Ultrafast Diode - TO-247
Descriptions
Descriptions of onsemi HGTG12N60A4D provided by its distributors.
600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode
HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247
The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.7 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current54 A
Current Rating54 A
Element ConfigurationSingle
Fall Time95 ns
Max Collector Current54 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation167 W
Reverse Recovery Time30 ns
Rise Time16 ns
Schedule B8541290080
Turn-Off Delay Time96 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)600 V
Dimensions
Height4.82 mm
Length15.87 mm
Width4.82 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements