onsemi FQPF6N90C

Name: onsemi FQPF6N90C
Brand: onsemi
SKU: FQPF6N90C

Power Mosfet, N-channel, Qfet®, 900 V, 6 A, 2.3 Ω, TO-220F

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		FQPF6N90C	0	2K							6d
Farnell	2	FQPF6N90C	0	1		3.451*	2.928*	2.498*	2.055*	2.055*	20h
Microchip USA		FQPF6N90C	267	3500	Tray					0.280	12h
Win Source		WS-FQPF6N90C	15,000	21				2.238	1.877	1.877	20h
Worldway Electronics		FQPF6N90C	12,348	7	Tube		1.074	1.023	1.023	1.023	19h

Inventory History

3 month trend: -100%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQPF6N90C.

Upverter

Technical Drawing1 page5 years ago

Farnell

onsemi

Fairchild Semiconductor

element14 APAC

Inventory History

3 month trend:

-100%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQPF6N90C

onsemiFQAF5N90

Price @ 1000

$ 1.339

Stock

6,213,727

74,737

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

900 V

Continuous Drain Current (ID)

6 A

4.1 A

Threshold Voltage

5 V

Rds On Max

2.3 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

56 W

90 W

Input Capacitance

1.77 nF

1.55 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-05

Lifecycle StatusEOL (Last Updated: 4 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Descriptions

Descriptions of onsemi FQPF6N90C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F

onsemi

N-Channel 900 V 2.3 Ohm Through Hole Mosfet - TO-220F

Future Electronics

MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 56 W

Distrelec

Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, 900V; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 56

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor