onsemi FQAF5N90
$ 1.339
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQAF5N90 | 220 | 210 | |||||||||
| Rochester Electronics | FQAF5N90 | 220 | 23h | |||||||||
| Microchip USA | FQAF5N90 | 148 | 3K | Tube | 15h | |||||||
| Component Stockers USA | FQAF5N90 | 259 | 1d | |||||||||
| Win Source | WS-FQAF5N90 | 15,000 | 40 | 1d |
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2006-10-05
LTD Date2007-04-05
Descriptions
Descriptions of onsemi FQAF5N90 provided by its distributors.
Power Field-Effect Transistor, 4.1A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 900V 4.1A TO-3PF
N-Channel 900V 4.1A (Tc) 90W (Tc) Through Hole TO-3PF
Not available to order 900V N-Channel QFET
N-CHANNEL POWER MOSFET
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSC
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)4.1 A
Current Rating4.1 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance2.3 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.55 nF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max2.3 Ω
Rise Time65 ns
Turn-Off Delay Time65 ns
Voltage Rating (DC)900 V