onsemi FQPF6N80C

Name: onsemi FQPF6N80C
Brand: onsemi
SKU: FQPF6N80C

Power Mosfet, N-channel, Qfet®, 800 V, 5.5 A, 2.5 Ω, TO-220F

$ 1.04

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min
Avnet		FQPF6N80C	13,600	305				2.158	2.050	6d
Verical	2	FQPF6N80C	107	2		1.872	1.399	1.031	1.031
Arrow Electronics	2	FQPF6N80C	107	1	2.731	1.872	1.399	1.399	1.399
Rochester Electronics		FQPF6N80C	12,550				1.260	1.050	0.932	2d
Flip Electronics		FQPF6N80C	13,600							>1wk

Inventory History

3 month trend: -3.64%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQPF6N80C.

IHS

Datasheet10 pages12 years ago

Datasheet0 pages0 years ago

Factory Futures

onsemi

element14 APAC

Fairchild Semiconductor

Inventory History

3 month trend:

-3.64%

Alternate Parts

This Part

Alternate Parts

onsemiFQPF6N80C

onsemiFQPF5N80

Price @ 1000

$ 1.04

$ 0.913

Stock

187,859

2,188,923

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

800 V

Continuous Drain Current (ID)

5.5 A

2.8 A

Threshold Voltage

5 V

Rds On Max

2.5 Ω

2.6 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

51 W

47 W

Input Capacitance

1.31 nF

1.25 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-06-18

Lifecycle StatusEOL (Last Updated: 4 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Descriptions

Descriptions of onsemi FQPF6N80C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F

onsemi

N-Channel 800 V 2.5 Ohm Flange Mount Mosfet - TO-220F

Future Electronics

800V 5.5A 2.5´Î@10V2.75A 51W 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

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Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube

Verical

Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.3A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.95ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor