STMicroelectronics STP6NK90ZFP
$ 1.38
Production
Inventory History
3 month trend: -11.38%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP6NK90ZFP.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STP6NK90ZFP provided by its distributors.
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
Single N-Channel 900 V 2 Ohm 60.5 nC 30 W Silicon Flange Mount Mosfet - TO-220FP
STP6NK90ZFP N-CHANNEL MOSFET TRANSISTOR, 5.8 A, 900 V, 3-PIN TO-220FP
N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-220FP package
Ciiva
Power MOSFET, N Channel, 900 V, 5.8 A, 1.56 ohm, TO-220FP, Through Hole
Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220FP Tube
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=900 V, 5.8 A, TO-220FP, , 3
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipa
Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -11.38%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)5.8 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.35 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max2 Ω
Rise Time45 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time20 ns
Turn-On Delay Time17 ns
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP6NK90ZFP.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant