STMicroelectronics STP7NK80ZFP
$ 1.447
Production
Inventory History
3 month trend: -0.96%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP7NK80ZFP.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
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N-channel 800 V, 1.3 Ohm, 6.2 A, TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP6NK90ZFP
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP5NK80ZFP
N-channel 800 V, 1.9 Ohm, 4.3 A, Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
Descriptions
Descriptions of STMicroelectronics STP7NK80ZFP provided by its distributors.
STP7NK80ZFP N-CHANNEL MOSFET TRANSISTOR, 5.2 A, 800 V, 3-PIN TO-220FP
N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in a TO-220FP package
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=800 V, 5.2 A, TO-220FP, , 3
5.2 A 800 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-220AB
800 V, 5.2 A, 1.5 OHM TO-220FP N CHANNEL ZENER, PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.96%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)5.2 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.8 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.138 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max1.8 Ω
Resistance1.8 Ω
Rise Time12 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time45 ns
Turn-On Delay Time20 ns
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP7NK80ZFP.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant