onsemi FQPF12N60C

Name: onsemi FQPF12N60C
Brand: onsemi
SKU: FQPF12N60C

Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220F

$ 1.238

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min
Verical	FQPF12N60C	623	226				1.375	1.230
Rochester Electronics	FQPF12N60C	623				1.330	1.100	0.984	7h
element14 APAC	FQPF12N60C..	0	1	3.543*	2.480*	2.018*	1.736*	1.736*	21h
Farnell	FQPF12N60C..	0	1	2.742*	2.742*	1.371*	0.833*	0.833*	7h
Component Stockers USA	FQPF12N60C	507		1.570	1.570	1.470	1.470	1.470	>1wk

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQPF12N60C.

IHS

Datasheet8 pages12 years ago

Datasheet0 pages0 years ago

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQPF12N60C

onsemiFDPF12N60NZ

Price @ 1000

$ 1.238

$ 1.16

Stock

122,788

366,662

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

12 A

Threshold Voltage

4 V

Rds On Max

650 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

51 W

39 W

Input Capacitance

2.29 nF

1.676 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-03-05

Lifecycle StatusObsolete (Last Updated: 2 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FQPF12N60C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220F

onsemi

600V 12A 51W 650m´Î@10V6A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation

Farnell

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Fairchild Semiconductor