onsemi FDPF12N60NZ

Name: onsemi FDPF12N60NZ
Brand: onsemi
SKU: FDPF12N60NZ

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F

$ 1.127

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3 month trend: +63.82%

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDPF12N60NZ.

Upverter

Technical Drawing1 page5 years ago

Newark

IHS

Master Electronics

onsemi

Inventory History

3 month trend:

+63.82%

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Alternate Parts

This Part

Alternate Parts

onsemiFDPF12N60NZ

onsemiFQPF12N60C

Price @ 1000

$ 1.127

$ 1.238

Stock

460,471

180,588

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

12 A

Threshold Voltage

4 V

Rds On Max

650 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

39 W

51 W

Input Capacitance

1.676 nF

2.29 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDPF12N60NZ provided by its distributors.

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F

onsemi

FDPF12N60NZ Series 600 V 12 A 650 mOhm N-Ch PowerTrench® MOSFET - TO-220F

Future Electronics

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

39W(Tc) 30V 5V@ 250µA 34nC@ 10 V 1individualNChannel 600V 650mΩ@ 6A,10V 12A 1.676nF@25V TO-220F-3 Through hole mounting 10.16mm*4.7mm*19.1mm

UnikeyIC

MOSFET, N CH, 600V, 0.53OHM, 12A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; MSL:- ;RoHS Compliant: Yes

Newark

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor