onsemi FDPF12N60NZ

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F

FDPF12N60NZ Series 600 V 12 A 650 mOhm N-Ch PowerTrench® MOSFET - TO-220F

MOSFET, N-Ch, 600V, 12A, 650mΩ@6A,10V, 39W(Tc), 30V, 5V@250µA, 34nC@10V, 1.676nF@25V, TO-220F-3, TH, 10.16mm × 4.7mm × 19.1mm

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N CH, 600V, 0.53OHM, 12A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; MSL:- ;RoHS Compliant: Yes

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.