onsemi FDPF12N60NZ

Name: onsemi FDPF12N60NZ
Brand: onsemi
SKU: FDPF12N60NZ

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F

$ 1.16

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min
Avnet		FDPF12N60NZ	6,000	50			1.300	1.009	1.009	5d
Newark	2	FDPF12N60NZ	6,152	1	3.630	2.020	1.800	1.510	1.450
Verical		FDPF12N60NZ	2,000	50			1.718	1.200	1.200
Arrow Electronics		FDPF12N60NZ	3	1	1.431	1.431	1.431	1.431	1.431
Master Electronics		FDPF12N60NZ	2,000	50			1.460	1.015	0.971

Inventory History

3 month trend: -35.83%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDPF12N60NZ.

Upverter

Technical Drawing1 page5 years ago

Newark

IHS

Master Electronics

onsemi

Inventory History

3 month trend:

-35.83%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDPF12N60NZ

onsemiFQPF12N60C

Price @ 1000

$ 1.16

$ 1.238

Stock

356,949

122,788

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

12 A

Threshold Voltage

4 V

Rds On Max

650 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

39 W

51 W

Input Capacitance

1.676 nF

2.29 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDPF12N60NZ provided by its distributors.

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F

onsemi

FDPF12N60NZ Series 600 V 12 A 650 mOhm N-Ch PowerTrench® MOSFET - TO-220F

Future Electronics

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N CH, 600V, 0.53OHM, 12A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; MSL:- ;RoHS Compliant: Yes

Newark

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor