onsemi FQP9N50C

Name: onsemi FQP9N50C
Brand: onsemi
SKU: FQP9N50C

Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220

$ 0.707

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min
Rochester Electronics	2	FQP9N50C	200				0.852	0.707	0.630	20h
Newark		FQP9N50C	0	1K
element14 APAC		FQP9N50C	0	1	1.861*	1.470*	1.251*	0.915*	0.868*	1d
Farnell		FQP9N50C	0	1	1.719*	1.719*	0.900*	0.900*	0.900*	20h
Component Stockers USA		FQP9N50C	125		0.790	0.790	0.740	0.740	0.740	>1wk

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP9N50C.

IHS

Datasheet13 pages22 years ago

Newark

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

+0.00%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-06-18

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FQP9N50C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220

onsemi

Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Rail

Avnet

Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:10V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:9A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Fairchild Semiconductor