onsemi FQA55N25

Name: onsemi FQA55N25
Brand: onsemi
SKU: FQA55N25

N-Channel Power MOSFET, QFET®, 250 V, 55 A, 40 mΩ, TO-3P

$ 3.049

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min
Verical	2	FQA55N25	151	95			3.788	3.388	3.188
Rochester Electronics		FQA55N25	277				3.030	2.710	2.550	1d
element14 APAC		FQA55N25	0	1	8.105*	5.672*	4.624*	3.967*	3.967*	1d
Farnell		FQA55N25	0	1	8.333*	6.976*	6.976*	6.976*	6.976*	1d
Component Stockers USA		FQA55N25	440		5.180	5.180	4.870	4.870	4.870	>1wk

Inventory History

3 month trend: -23.48%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQA55N25.

Farnell

Datasheet0 pages0 years ago

Datasheet8 pages12 years ago

Datasheet8 pages25 years ago

Datasheet8 pages17 years ago

Upverter

IHS

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

-23.48%

CAD Models

Download onsemi FQA55N25 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-09-13

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

Related Parts

InfineonIRFP4332PBF

MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 360 W

Details

InfineonIRFB4332PBF

IRFB4332PBF N-channel MOSFET Transistor, 60 A, 250 V, 3-Pin TO-220AB

Details

onsemiFQA65N20

N-Channel Power MOSFET, QFET®, 200 V, 65 A, 32 mΩ, TO-3P

Details

InfineonIRFP4229PBF

MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W

Details

onsemiFQA62N25C

N-Channel Power MOSFET, QFET®, 250 V, 62 A, 35 mΩ, TO-3P

Details

onsemiFDA59N25

N-Channel Power MOSFET, UniFETTM, 250V, 59A, 49mΩ, TO-3P

Details

Descriptions

Descriptions of onsemi FQA55N25 provided by its distributors.

N-Channel Power MOSFET, QFET®, 250 V, 55 A, 40 mΩ, TO-3P

onsemi

Trans MOSFET N-CH 250V 55A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 250V 55A TO-3P

Win Source

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:250V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor