Infineon IRFB4332PBF

Name: Infineon IRFB4332PBF
Brand: Infineon
SKU: IRFB4332PBF

IRFB4332PBF N-channel MOSFET Transistor, 60 A, 250 V, 3-Pin TO-220AB

$ 1.685

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
Arrow Electronics	IRFB4332PBF	679	1		3.497	2.014	1.870	1.870	1.870
Rutronik	TMOSP12128	10,150	50				1.780	1.430	1.430	19h
RS (Formerly Allied Electronics)	IRFB4332PBF	0	50	Bulk			3.500	3.150	3.150	4h
Avnet	IRFB4332PBF	0	1K							1d
Farnell	IRFB4332PBF	0	1		4.236*	2.265*	2.078*	2.078*	2.078*	2h

Inventory History

3 month trend: -16.98%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB4332PBF.

ODG (Origin Data Global)

Datasheet8 pages17 years ago

IHS

iiiC

DigiKey

Inventory History

3 month trend:

-16.98%

CAD Models

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Supply Chain

Country of OriginMainland China, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-06-05

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2026-05-31

LTD Date2026-11-30

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Descriptions

Descriptions of Infineon IRFB4332PBF provided by its distributors.

IRFB4332PBF N-channel MOSFET Transistor, 60 A, 250 V, 3-Pin TO-220AB

RS (Formerly Allied Electronics)

Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Trans Mosfet N-Ch 250V 60A 3-Pin(3+Tab) To-220Ab Rohs Compliant: Yes

Newark

Power Field-Effect Transistor, 60A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, N, 250V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:250V; On Resistance Rds(on):33mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:390W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4332; Current Id Max:60A; N-channel Gate Charge:99nC; Package / Case:TO-220AB; Power Dissipation Pd:390W; Power Dissipation Pd:390mW; Pulse Current Idm:230A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

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