onsemi FDA59N25

Name: onsemi FDA59N25
Brand: onsemi
SKU: FDA59N25

N-Channel Power MOSFET, UniFETTM, 250V, 59A, 49mΩ, TO-3P

$ 1.81

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Price and Stock

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Distributor		SKU		Min	Pkg
Newark		FDA59N25	1,867	1		5.210	3.200	2.760	2.610	2.610
Arrow Electronics	3	FDA59N25	11	1		2.532	1.685	1.685	1.685	1.685
Verical	2	FDA59N25	10	4			1.853	1.743	1.632	1.632
DigiKey		FDA59N25-ND	182	1	Tube	4.810	4.810	2.683	1.869	1.739
Flip Electronics		FDA59N25	450								7d

Inventory History

3 month trend: -3.34%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDA59N25.

Newark

Datasheet0 pages0 years ago

Datasheet8 pages20 years ago

Upverter

IHS

onsemi

Farnell

Inventory History

3 month trend:

-3.34%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-10-05

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDA59N25 provided by its distributors.

N-Channel Power MOSFET, UniFETTM, 250V, 59A, 49mΩ, TO-3P

onsemi

Single N-Channel 250 V 0.049 Ohm 82 nC 392 W Silicon Flange Mount Mosfet TO-3PN

Future Electronics

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:250V; On Resistance Rds(on):49mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:392W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Package / Case:TO-3P; Power Dissipation Pd:392W; Power Dissipation Pd:392W; Pulse Current Idm:236A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor