onsemi FDY101PZ

Name: onsemi FDY101PZ
Brand: onsemi
SKU: FDY101PZ

P-Channel (-2.5V) Specified PowerTrench® MOSFET -20V, -0.15A, 8Ω

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Flip Electronics		FDY101PZ	6,000								6d
element14 APAC	2	FDY101PZ	0	5	Cut Tape		0.723*	0.708*	0.678*	0.663*	9h
Farnell	2	FDY101PZ	0	5	Cut Tape		0.498*	0.304*	0.170*	0.153*	20h
Component Stockers USA		FDY101PZ	21,570			0.120	0.120	0.120	0.110	0.100	>1wk
Win Source		WS-FDY101PZ	21,000	12				3.722	3.337	3.337	21h

Inventory History

3 month trend: -14.29%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDY101PZ.

Upverter

Technical Drawing1 page6 years ago

IHS

element14 APAC

onsemi

Farnell

Inventory History

3 month trend:

-14.29%

CAD Models

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Supply Chain

Country of OriginSouth Korea

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date2006-02-24

Lifecycle StatusEOL (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FDY101PZ provided by its distributors.

P-Channel (-2.5V) Specified PowerTrench® MOSFET -20V, -0.15A, 8Ω

onsemi

Trans MOSFET P-CH 20V 0.15A 3-Pin SOT-523FL T/R

Richardson RFPD

MOSFETs -20VSgl P-Ch -2.5V Spec PwrTrch MOSFET

Mouser

-2.5V, SINGLE, PCH, SPECIFIED POWER TRENCH MOSFET

Onlinecomponents.com

Small Signal Field-Effect Transistor, 0.15A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

20V 150mA 8´Î@4.5V150mA 625mW 1V@250uA 15pF@10V P Channel 100pF@10V 1nC@4.5V -55¡Í~+150¡Í@(Tj) SC-89-3 MOSFETs ROHS

Dasenic

This Single P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = -2.5v.

Fairchild Semiconductor

SMALL SIGNAL FIELD-EFFECT TRANSI

ODG (Origin Data Global)

MOSFET, P, SC89 SMD; Transistor Polarity:P Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-150mA; Package / Case:SC-89; Power Dissipation Pd:625mW; Pulse Current Idm:1A; SMD Marking:B; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-8V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

element14 APAC